FQPF12N60C
Manufacturer:
On Semiconductor
Mfr.Part #:
FQPF12N60C
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 51 W 600 V Continuous Drain Current (ID):12 A 48 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 600 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Tube |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 12 A |
| Lifecycle Status | NRND (Last Updated: 2 months ago) |
| Max Power Dissipation | 51 W |
| Power Dissipation | 51 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 2.29 nF |
| Continuous Drain Current (ID) | 12 A |
| Rds On Max | 650 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Turn-Off Delay Time | 155 ns |
| Element Configuration | Single |
| Fall Time | 90 ns |
| Rise Time | 85 ns |
| Gate Charge | 48 nC |
| Drain to Source Resistance | 650 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Manufacturer Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | N-Channel |
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